Intervalley-Scattering Induced Electron-Phonon Energy Relaxation in Many-Valley Semiconductors at Low Temperatures

摘要

We report on the effect of elastic intervalley scattering on the energytransport between electrons and phonons in many-valley semiconductors. Wederive a general expression for the electron-phonon energy flow rate at thelimit where elastic intervalley scattering dominates over diffusion. Electronheating experiments on heavily doped n-type Si samples with electronconcentration in the range $3.5-16.0\times 10^{25}$ m$^{-3}$ are performed atsub-1 K temperatures. We find a good agreement between the theory and theexperiment.